UD50N03 n-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage 30 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 51 a i d @t c =100 continuous drain current, v gs @ 10v 1 30 a i d @t a =25 continuous drain current, v gs @ 10v 1 11 a i d @t a =70 continuous drain current, v gs @ 10v 1 9 a i dm pulsed drain current 2 112 a eas single pulse avalanche energy 3 53 mj i as avalanche current 22 a p d @t c =25 total power dissipation 4 37.5 w p d @t a =25 total power dissipation 4 2.42 w t stg storage temperature range -55 to 175 t j operating junction temperature range -55 to 175 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r jc thermal resistance junction-case 1 --- 4 /w 1 id 30v 12m 51a the UD50N03 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD50N03 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. ? advanced high cell density trench technology ? super low gate charge ? excellent cdv/dt effect decline ? 100% eas guaranteed ? green device available general description features applications ? high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga ? networking dc-dc power system ? load switch absolute maximum ratings thermal data to252 pin configuration product summery g d s general description product summery applications features to252 pin configuration absolute maximum ratings thermal data bv dss r ds(on)
UD50N03 n-ch 30v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.0193 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =30a --- 10 12 m w v gs =4.5v , i d =15a --- 15 18 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -3.97 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =30a --- 34 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.8 3.6 ? q g total gate charge (4.5v) v ds =15v , v gs =4.5v , i d =15a --- 9.8 13.7 nc q gs gate-source charge --- 4.2 5.88 q gd gate-drain charge --- 3.6 5.0 t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 w i d =15a --- 4 8.0 ns t r rise time --- 8 14 t d(off) turn-off delay time --- 31 62 t f fall time --- 4 8 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 940 1316 pf c oss output capacitance --- 131 183 c rss reverse transfer capacitance --- 109 153 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =15a 24.6 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 43 a i sm pulsed source current 2,6 --- --- 112 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v t rr reverse recovery time i f =30a , di/dt=100a/s , t j =25 --- 8.5 --- ns q rr reverse recovery charge --- 2.2 --- nc 2 note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =22a 4.the power dissipation is limited by 175 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics
UD50N03 n-ch 30v fast switching mosfets 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 v ds , drain-to-source voltage (v) i d d r a i n c u r r e n t ( a ) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 10 13 15 18 20 4 6 8 10 v gs (v) r d s o n ( m ) i d =30a 0 2 4 6 8 10 12 0 0.3 0.6 0.9 1.2 v sd , source-to-drain voltage (v) i s s o u r c e c u r r e n t ( a ) t j =175 t j =25 0 0.5 1 1.5 -50 25 100 175 t j ,junction temperature ( ) n o r m a l i z e d v g s ( t h ) 0.5 1.0 1.5 2.0 -50 25 100 175 t j , junction temperature ( ) n o r m a l i z e d o n r e s i s t a n c e 3 typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse diode fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j
UD50N03 n-ch 30v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 v ds drain to source voltage(v) c a p a c i t a n c e ( p f ) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 v ds (v) i d ( a ) 10us 1ms 10ms 100ms dc t c =25 single pulse 100us 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) n o r m a l i z e d t h e r m a l r e s p o n s e ( r j c ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.02 t d ( on ) t r t on t d ( off ) t f t off v ds v gs 90 % 10 % i as v gs bv dss v dd eas = 1 2 l x i as 2 x bv dss bv dss - v dd 4 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform fffwaveform fig.7 capacitance fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.10 switching time waveform fig.11 unclamped inductive switching waveform fig.11 unclamped inductive switching waveform fig.11 unclamped inductive switching waveform fig.11 unclamped inductive switching waveform
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